IRF630N Parameter specification：

Transistor polarity: n-channel

VDS drain source breakdown voltage: 200 V

ID - continuous drain current: 9.3 a

RDS on leakage source on resistance: 300 MOhms

VGS - grid - source voltage: 20 V

QG grid charge: 23.3 NC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

PD power dissipation: 82 w

Configuration: Single

Channel mode: enhancement

Encapsulation: tube

Height: 15.65 mm

Length: 10 mm

Transistor type: 1 n-channel

Width: 4.4 mm

Trademark: Infineon Technologies

Forward transconductance - Minimum: 4.9 s

Descent time: 15 NS

Product type: MOSFET

Rise time: 14 NS

Factory packing quantity: 1000

Subcategory: MOSFETs

Typical shutdown delay time: 27 NS

Typical on delay time: 7.9 NS

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